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RD3L140SP P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor RD3L140SP *.

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Datasheet Specifications

Part number
RD3L140SP
Manufacturer
INCHANGE
File Size
275.87 KB
Datasheet
RD3L140SP-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤84mΩ(VGS= -10V; ID= -14A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Inverters
* DC / DC converter
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 20 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

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