SPD04N60C3 - N-Channel MOSFET
SPD04N60C3 Features
* Static drain-source on-resistance: RDS(on)≤0.95Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* Improved transconductance
* ABSOLUTE MAXIMUM RAT
