SPP02N60C3 - N-Channel MOSFET

INCHANGE

SPP02N60C3 Datasheet Preview — Preview of SPP02N60C3 PDF

Datasheet Details

Part number	SPP02N60C3
Manufacturer	INCHANGE
File Size	242.73 KB
Description	N-Channel MOSFET
Datasheet	SPP02N60C3-INCHANGE.pdf

SPP02N60C3 Product details

Description

Ultra low gate charge Ultra low effective capacitance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 25 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance

Features

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Static drain-source on-resistance: RDS(on) ≤3Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 14, 2020 |