SPP02N60C3 - N-Channel MOSFET
*Ultra low gate charge *Ultra low effective capacitance *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 2
