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SPP02N60C3

N-Channel MOSFET

SPP02N60C3 Features

* Static drain-source on-resistance: RDS(on) ≤3Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* Ultra low effective capacitance

SPP02N60C3 General Description


*Ultra low gate charge
*Ultra low effective capacitance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 2.

SPP02N60C3 Datasheet (242.73 KB)

Preview of SPP02N60C3 PDF

Datasheet Details

Part number:

SPP02N60C3

Manufacturer:

INCHANGE

File Size:

242.73 KB

Description:

N-channel mosfet.

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SPP02N60C3 N-Channel MOSFET INCHANGE

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