SPP20N65C3 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

SPP20N65C3 N-Channel MOSFET

isc N-Channel MOSFET Transistor SPP20N65C3，ISPP20N65C3 *.
Ultra low gate charge. High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt.

SPP20N65C3-INCHANGE.pdf

SPP20N65C3 Datasheet Preview — Preview of SPP20N65C3 PDF

Datasheet Details

Part number:

SPP20N65C3

Manufacturer:

INCHANGE

File Size:

243.23 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

SPP20N65C3 Distributors

📁 Related Datasheet

SPP20N60C2 SPP20N60C3 SPP20N60CFD SPP20N60S5 SPP2095 SPP21N10

📌 All Tags

SPP20N65C3 N-Channel MOSFET INCHANGE

INCHANGE SPP20N65C3-like datasheet