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STB32NM50N N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB32NM50N *.
Drain Current: ID= 22A@ TC=25℃. Drain Source Voltage : VDSS= 500V(Min). 100% avalanche tested. Minimum Lot-to-Lot variations for robu.

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Datasheet Specifications

Part number
STB32NM50N
Manufacturer
INCHANGE
File Size
201.93 KB
Datasheet
STB32NM50N-INCHANGE.pdf
Description
N-Channel MOSFET

Applications

* .
* Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 190 W Tj

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