Si2315BDS

P-Channel MOSFET

INCHANGE

* Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Be suitable for synchronous rectificati

Si2315BDS

INCHANGE

271.74 KB

P-channel mosfet.

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TAGS

Si2315BDS P-Channel MOSFET INCHANGE

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