Si2315BDS P-Channel MOSFET

INCHANGE

Si2315BDS Description

isc P-Channel MOSFET Transistor Si2315BDS *.

Si2315BDS Features

* Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectificati

Si2315BDS Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous@TA=25℃ IDM Drain Current-Single Pulsed PD Total Dissipation @TA=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature
* THERMAL CHAR

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Si2315BDS Datasheet Preview — Preview of Si2315BDS PDF

Datasheet Details

Part number: Si2315BDS
Manufacturer: INCHANGE
File Size: 271.74 KB
Datasheet: Si2315BDS-INCHANGE.pdf
Description: P-Channel MOSFET

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P-Channel MOSFET INCHANGE

INCHANGE Si2315BDS-like datasheet