TK12P60W Datasheet - INCHANGE

TK12P60W, N-Channel MOSFET

Isc N-Channel MOSFET Transistor TK12P60W *

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 100 Tch Max.
Operating Junction Te

TK12P60W-INCHANGE.pdf