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TK16G60W N-Channel MOSFET

TK16G60W Description

isc N-Channel MOSFET Transistor TK16G60W *.

TK16G60W Features

* Low drain-source on-resistance: RDS(on) ≤0.19Ω.
* Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MA

TK16G60W Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TK16G60W
Manufacturer
INCHANGE
File Size
261.00 KB
Datasheet
TK16G60W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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