TK16A60W5 - Silicon N-Channel MOSFET
TK16A60W5 Features
* (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit 1: Gate
