* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK160F10N1L TO-220SM(W) 1: Gate 2: Drain (He
TK160F10N1L Datasheet (489.28 KB)
TK160F10N1L
489.28 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK160F10N1L
1. Applications
* Automotive
* Switching Voltage Regulators
* DC-DC Conve.
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