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TK16A55D

Silicon N-Channel MOSFET

TK16A55D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2

TK16A55D Datasheet (225.77 KB)

Preview of TK16A55D PDF

Datasheet Details

Part number:

TK16A55D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

225.77 KB

Description:

Silicon n-channel mosfet.

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TK16A55D Silicon N-Channel MOSFET Toshiba Semiconductor

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