Datasheet4U Logo Datasheet4U.com

TK16A55D Datasheet - Toshiba Semiconductor

TK16A55D - Silicon N-Channel MOSFET

TK16A55D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2

TK16A55D-ToshibaSemiconductor.pdf

Preview of TK16A55D PDF
TK16A55D Datasheet Preview Page 2 TK16A55D Datasheet Preview Page 3

Datasheet Details

Part number:

TK16A55D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

225.77 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

📌 All Tags