Part number:
TK16A55D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
225.77 KB
Description:
Silicon n-channel mosfet.
* (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2
TK16A55D Datasheet (225.77 KB)
TK16A55D
Toshiba ↗ Semiconductor
225.77 KB
Silicon n-channel mosfet.
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