TK16A55D - Silicon N-Channel MOSFET
TK16A55D Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK16A55D 1: Gate (G) 2
