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TK17A65U N-Channel MOSFET

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Description

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK17A65U,ITK17A65U *.

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Datasheet Specifications

Part number
TK17A65U
Manufacturer
INCHANGE
File Size
248.24 KB
Datasheet
TK17A65U-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(ON) = 0.20Ω (typ. )
* Low leakage current: IDSS = 100 µA (max) (VDS = 650 V)
* Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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