NJ01 Datasheet - INTERFET

NJ01 Silicon Junction Field-Effect Transistor

F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ01 Process. Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN.

NJ01 Datasheet (148.27 KB)