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IRG4PH40UD2

Insulated Gate Bipolar Transistor

IRG4PH40UD2 Features

* • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel dio

IRG4PH40UD2 Datasheet (248.85 KB)

Preview of IRG4PH40UD2 PDF

Datasheet Details

Part number:

IRG4PH40UD2

Manufacturer:

IRF

File Size:

248.85 KB

Description:

Insulated gate bipolar transistor.

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IRG4PH40UD2 Insulated Gate Bipolar Transistor IRF

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