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PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing.
IRG4PH40UD2 Datasheet
