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IRG4PH40UD2-E

Insulated Gate Bipolar Transistor

IRG4PH40UD2-E Features

* INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant

IRG4PH40UD2-E Datasheet (296.09 KB)

Preview of IRG4PH40UD2-E PDF

Datasheet Details

Part number:

IRG4PH40UD2-E

Manufacturer:

IRF

File Size:

296.09 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRG4PH40UD2-E Insulated Gate Bipolar Transistor IRF

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