* INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diod
IRG4PH40UD2-EP Datasheet (231.09 KB)
IRG4PH40UD2-EP
IRF
231.09 KB
Insulated gate bipolar transistor.
PD - 95239
IRG4PH40UD2-EP
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM u.
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