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IRG4PH40UD2-EP Datasheet - IRF

IRG4PH40UD2-EP Insulated Gate Bipolar Transistor

IRG4PH40UD2-EP Features

* INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diod

IRG4PH40UD2-EP Datasheet (231.09 KB)

Preview of IRG4PH40UD2-EP PDF

Datasheet Details

Part number:

IRG4PH40UD2-EP

Manufacturer:

IRF

File Size:

231.09 KB

Description:

Insulated gate bipolar transistor.

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IRG4PH40UD2-EP Insulated Gate Bipolar Transistor IRF

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