IRG4PH40UPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

* New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

* Optimized for power conversion; SMPS, UPS and welding

IRG4PH40UPBF

International Rectifier

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Insulated gate bipolar transistor.

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