IRG4PH50UD

INSULATED GATE BIPOLAR TRANSISTOR

IRF

* UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

* New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-re

IRG4PH50UD

IRF

229.83 KB

Insulated gate bipolar transistor.

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IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR IRF

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