* Short Circuit Rated UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits
* Latest generation 4 IGBT's offer highest power density motor controls possible
* HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery chara
IRG4PH50KDPBF Datasheet (741.94 KB)
IRG4PH50KDPBF
International Rectifier
741.94 KB
Insulated gate bipolar transistor.
www.DataSheet.co.kr
PD- 95189
IRG4PH50KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
* High short circuit rating.
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