IRG4PH50KDPBF Datasheet - International Rectifier

IRG4PH50KDPBF INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet.co.kr PD- 95189 IRG4PH50KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Featu.

IRG4PH50KDPBF Features

* Short Circuit Rated UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits

* Latest generation 4 IGBT's offer highest power density motor controls possible

* HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery chara

IRG4PH50KDPBF Datasheet (741.94 KB)