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IRG4PH50S-EPBF Datasheet - International Rectifier

IRG4PH50S-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50S-EPBF Features

* • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V

IRG4PH50S-EPBF Datasheet (216.73 KB)

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Datasheet Details

Part number:

IRG4PH50S-EPBF

Manufacturer:

International Rectifier

File Size:

216.73 KB

Description:

Insulated gate bipolar transistor.

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IRG4PH50S-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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