Part number:
IRG4PH50S-EPBF
Manufacturer:
International Rectifier
File Size:
216.73 KB
Description:
Insulated gate bipolar transistor.
IRG4PH50S-EPBF Datasheet (216.73 KB)
* Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V
IRG4PH50S-EPBF Datasheet (216.73 KB)
IRG4PH50S-EPBF
International Rectifier
216.73 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PH50SPbF Standard Speed IGBT (IRF)
IRG4PH50K INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PH50KD INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PH50KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PH50KPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PH50UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PH50UPbF Ultra Fast Speed IGBT (International Rectifier)
