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IRGPC50F

INSULATED GATE BIPOLAR TRANSISTOR

IRGPC50F Features

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 1.7V @VGE = 15V, I C = 39A n-channel Description Insulated Gate Bipolar Transistors (I

IRGPC50F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPC50F Datasheet (269.66 KB)

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Datasheet Details

Part number:

IRGPC50F

Manufacturer:

IRF

File Size:

269.66 KB

Description:

Insulated gate bipolar transistor.

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IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR IRF

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