IRGPC50S - INSULATED GATE BIPOLAR TRANSISTOR

IRF

The IRGPC50S by IRF is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

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IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Official preview page of the **IRGPC50S** INSULATED GATE BIPOLAR TRANSISTOR datasheet (IRF).

Datasheet Details

Part number	IRGPC50S
Manufacturer	IRF
File Size	259.63 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPC50S_IRF.pdf
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IRGPC50S Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 1.6V @VGE = 15V, IC = 41A n-channel.

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Published: Aug 23, 2005 |