IRHMS597160 Datasheet - IRF

IRHMS597160 RADIATION HARDENED POWER MOSFET

PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A -45A IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of.

IRHMS597160 Features

* n n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High

IRHMS597160 Datasheet (174.25 KB)