Datasheet Details
- Part number
- IRHMS57260SE
- Manufacturer
- International Rectifier
- File Size
- 181.11 KB
- Datasheet
- IRHMS57260SE-InternationalRectifier.pdf
- Description
- RADIATION HARDENED POWER MOSFET
IRHMS57260SE Description
PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-P.
IRHMS57260SE Features
* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25
IRHMS57260SE Applications
* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a
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