IRHMS57260SE Datasheet - International Rectifier

IRHMS57260SE, RADIATION HARDENED POWER MOSFET

PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-P.

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Datasheet Details

Part number:

IRHMS57260SE

Manufacturer:

International Rectifier

File Size:

181.11 KB

Description:

RADIATION HARDENED POWER MOSFET

Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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IRHMS57260SE RADIATION HARDENED POWER MOSFET International Rectifier

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