IS45VM32800M - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI

Datasheet Details

Part number	IS45VM32800M
Manufacturer	ISSI
File Size	668.56 KB
Description	2M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS45VM32800M-ISSI.pdf

These IS42/45VM32800M are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits.

▪ JEDEC standard 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade).
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2, 3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask funct.

📁 IS45VM32800M Similar Datasheet

IS45VS16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS45VS16400L - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
IS45VS83200D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS450 - OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM (Sharp Electrionic Components)
IS455 - Linear Output Type OPIC Light Detector (Sharp Electrionic Components)
IS456 - High Speed Response Type OPIC Light Detector (Sharp Electrionic Components)
IS457 - High Speed Response Type OPIC Light Detector (Sharp Electrionic Components)
IS45LV44002B - DYNAMIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Jul 15, 2024 |