IS61QDPB44M18C - 72Mb QUADP SYNCHRONOUS SRAM

ISSI

Datasheet Details

The 72Mb IS61QDPB42M36C/C1/C2 and IS61QDPB44M18 C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

2Mx36 and 4Mx18 configuration available.
Separate independent read and write ports with concurrent read and write operations.
Max. 567 MHz clock for high bandwidth.
Double Data Rate (DDR) interface for read and write input ports.
2.5 cycle read latency.
Fixed 4-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising edges only.

📁 IS61QDPB44M18C Similar Datasheet

IS61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C1024L - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256 - 32K x 8 Low Voltage CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616 - 256K x 8 High Speed CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616AL - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256AH - 32K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C256AL - 32K x 8 High Speed CMOS STATIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 18, 2024 |