Description
The ISSI IS62WV25616DALL and IS62/65WV25616DBLL
are high-speed, low power, 4M bit SRAMs organized as
256K words by 16 bits.It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is low (deselcted) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the p
Features
- High-speed access time: 35, 45, 55 ns.
- CMOS low power operation
30 mW (typical) operating 6 µW (typical) CMOS standby.
- TTL compatible interface levels.
- Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL).
- Fully static operation: no clock or refresh required.
- Three state outputs.
- Data control for upper and lower bytes.
- Industrial and Automotive temperature support.
- Lead-free a.
IS62WV25616DALL-ISSI.pdf