Datasheet4U Logo Datasheet4U.com

IS62WV25616EALL Datasheet - ISSI

IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low powe.

IS62WV25616EALL Features

* High-speed access time: 35ns, 45ns, 55ns

* CMOS low power operation

* Operating Current: 22 mA (max) at 85°C

* CMOS Standby Current: 3.7uA (typ) at 25°C

* TTL compatible interface levels

* Single power supply

* 1.65V-2.2V VDD (IS62/65WV25616EALL)

* 2.

IS62WV25616EALL-ISSI.pdf

Preview of IS62WV25616EALL PDF
IS62WV25616EALL Datasheet Preview Page 2 IS62WV25616EALL Datasheet Preview Page 3

Datasheet Details

Part number:

IS62WV25616EALL

Manufacturer:

ISSI

File Size:

749.93 KB

Description:

Ultra low power cmos static ram.

📁 Related Datasheet

IS62WV25616EBLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)

IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)

IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM (ISSI)

IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM (ISSI)

IS62WV2568ALL ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)

IS62WV2568BLL ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)

TAGS

IS62WV25616EALL IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM ISSI

IS62WV25616EALL Distributor