Description
The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits.
Features
- High-speed access time: 55ns, 70ns.
- CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
- TTL compatible interface levels.
- Single power supply 1.65V--2.2V VDD (IS62WV25616ALL) 2.5V--3.6V VDD (IS62WV25616BLL).
- Fully static operation: no clock or refresh required.
- Three state outputs.
- Data control for upper and lower bytes.
- Industrial temperature available.
- Lead-free available.
IS62WV25616ALL_IntegratedSiliconSolution.pdf