Datasheet Details
- Part number
- IS66WVE2M16ALL
- Manufacturer
- ISSI
- File Size
- 451.84 KB
- Datasheet
- IS66WVE2M16ALL-ISSI.pdf
- Description
- 1.8V Core Async/Page PSRAM
IS66WVE2M16ALL Description
IS66WVE2M16ALL IS67WVE2M16ALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Ra.
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
IS66WVE2M16ALL Features
* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* VDD 1.8V, VDDQ 1.8V
* Page mode read access
* Interpage Read access : 70ns
* Intrapage Read access : 20ns
* Low Power Consumption
* Asynchronous Operation < 30 mA
* Intrapage R
IS66WVE2M16ALL Applications
* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance
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