IS66WVE2M16DALL 1.8V Core Async/Page PSRAM

ISSI

Description

IS66WVE2M16DALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access M.
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

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Datasheet Specifications

Part number: IS66WVE2M16DALL
Manufacturer: ISSI
File Size: 386.98 KB
Datasheet: IS66WVE2M16DALL-ISSI.pdf
Description: 1.8V Core Async/Page PSRAM

Features

* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* VDD 1.8V, VDDQ 1.8V
* Page mode read access
* Interpage Read access : 70ns
* Intrapage Read access : 20ns
* Low Power Consumption
* Asynchronous Operation < 30 mA
* Intrapage Re

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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IS66WVE2M16DALL 1.8V Core Async Page PSRAM ISSI

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