Datasheet Specifications
- Part number
- 150N10
- Manufacturer
- IXYS Corporation
- File Size
- 149.80 KB
- Datasheet
- 150N10_IXYSCorporation.pdf
- Description
- IXFN150N10
Description
www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW N-Channel Enhancement Mode Avalanche Rated, High .
Features
* International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier qApplications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount Space savings High pow150N10 Distributors
📁 Related Datasheet
📌 All Tags