* q q q ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 q q Thyristor for line frequency International standard package Long-term stability of blocking voltages Gate and auxiliary cathode pin connection Amplifying gate (di/dt)cr TVJ = TVJM repetitive, IT = 2500 A f = 5 Hz, tP =200 ms VD = 0.67 VDRM I
CS630
IXYS Corporation
48.78 KB
Phase control thyristor.
Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 12.
📁 Related Datasheet
CS630A3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS630A3R Silicon N-Channel Power MOSFET (CR Micro)
CS630A4H Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS630A4R Silicon N-Channel Power MOSFET (CR Micro)
CS630A8H Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS630D N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
CS630F VDMOS transistor (ETC)
CS630FA9H Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS630FA9R Silicon N-Channel Power MOSFET (CR Micro)
CS634F N-Channel MOSFET (LZG)
