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CS630FA9H Datasheet - Huajing Microelectronics

CS630FA9H - Silicon N-Channel Power MOSFET

CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 30 0.23 performance and enhance the avalanche energy.

The transistor can be used in various power switc

CS630FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol

CS630FA9H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS630FA9H

Manufacturer:

Huajing Microelectronics

File Size:

712.27 KB

Description:

Silicon n-channel power mosfet.

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