CS630FA9H Datasheet - Huajing Microelectronics

CS630FA9H Silicon N-Channel Power MOSFET

CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 30 0.23 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS630FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS630FA9H-HuajingMicroelectronics.pdf