Datasheet4U Logo Datasheet4U.com

CS630FA9H Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS630FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS630FA9H General Description

CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 30 0.23 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS630FA9H Datasheet (712.27 KB)

Preview of CS630FA9H PDF

Datasheet Details

Part number:

CS630FA9H

Manufacturer:

Huajing Microelectronics

File Size:

712.27 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS630FA9R Silicon N-Channel Power MOSFET (CR Micro)

CS630F VDMOS transistor (ETC)

CS630 Phase Control Thyristor (IXYS Corporation)

CS630A3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS630A3R Silicon N-Channel Power MOSFET (CR Micro)

CS630A4H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS630A4R Silicon N-Channel Power MOSFET (CR Micro)

CS630A8H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS630D N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)

CS634F N-Channel MOSFET (LZG)

TAGS

CS630FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS630FA9H Datasheet Preview Page 2 CS630FA9H Datasheet Preview Page 3

CS630FA9H Distributor