CS60N06AQ3 Datasheet - Huajing Microelectronics

CS60N06AQ3 Silicon N-Channel Power MOSFET

CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS60N06AQ3 Features

* l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS60N06AQ3-HuajingMicroelectronics.pdf