CS60N06AQ3 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power Trench MOSFET CS60N06 AQ3 ○R General .
CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS60N06AQ3
Manufacturer: Huajing Microelectronics
File Size: 1.82 MB
Datasheet: CS60N06AQ3-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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CS60N06AQ3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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