CS60N06AQ3

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS60N06AQ3 Features

* l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS60N06AQ3 General Description

CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS60N06AQ3 Datasheet (1.82 MB)

CS60N06AQ3 Datasheet Preview — Preview of CS60N06AQ3 PDF

Datasheet Details

Part number:

CS60N06AQ3

Manufacturer:

Huajing Microelectronics

File Size:

1.82 MB

Description:

Silicon n-channel power mosfet.

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CS60N06AQ3 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS60N06AQ3 Features

CS60N06AQ3 General Description

Datasheet Details

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