CS60N06C4 Datasheet - Huajing Microelectronics

CS60N06C4 Silicon N-Channel Power MOSFET

CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS60N06C4 Features

* l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

CS60N06C4-HuajingDiscreteDevices.pdf