Datasheet4U Logo Datasheet4U.com

CS60N06C4 Datasheet - Huajing Microelectronics

CS60N06C4 - Silicon N-Channel Power MOSFET

CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization an

CS60N06C4 Features

* l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Par

CS60N06C4-HuajingDiscreteDevices.pdf

Preview of CS60N06C4 PDF
CS60N06C4 Datasheet Preview Page 2 CS60N06C4 Datasheet Preview Page 3

Datasheet Details

Part number:

CS60N06C4

Manufacturer:

Huajing Microelectronics

File Size:

687.54 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags