CS60N12A8 - Silicon N-Channel Power MOSFET
CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher effic
CS60N12A8 Features
* VDSS ID PD(TC=25℃) RDS(ON)Typ 120 V 60 A 198 W 15 mΩ l Fast Switching l Low ON Resistance(Rdson≤20mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:112.9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃
