CS60N12A8 Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS60N12 A8 General .
CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching p.

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Datasheet Specifications

Part number: CS60N12A8
Manufacturer: CR Micro
File Size: 421.27 KB
Datasheet: CS60N12A8-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Volta

CS60N12A8 Distributors

📁 Related Datasheet

CS60N04A4 CS60N06 CS60N06A CS60N06AQ3 CS60N06C4 CS60

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CS60N12A8 Silicon N-Channel Power MOSFET CR Micro

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