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CS60N12A8 - Silicon N-Channel Power MOSFET

CS60N12A8 Description

Silicon N-Channel Power MOSFET ○R CS60N12 A8 General .
CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching p.

CS60N12A8 Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Volta

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Datasheet Details

Part number
CS60N12A8
Manufacturer
CR Micro
File Size
421.27 KB
Datasheet
CS60N12A8-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
CR Micro CS60N12A8-like datasheet