CS60N04A4

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS60N04A4 Features

* l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ Applications： Power switch circuit of adaptor and c

CS60N04A4 General Description

CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficie.

CS60N04A4 Datasheet (194.58 KB)

CS60N04A4 Datasheet Preview — Preview of CS60N04A4 PDF

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CS60N04A4

Manufacturer:

Huajing Microelectronics

File Size:

194.58 KB

Description:

Silicon n-channel power mosfet.

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CS60N04A4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS60N04A4 Features

CS60N04A4 General Description

Datasheet Details

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