CS60N04A4 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General .
CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching per.

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Datasheet Specifications

Part number: CS60N04A4
Manufacturer: Huajing Microelectronics
File Size: 194.58 KB
Datasheet: CS60N04A4-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Curr

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CS60N04A4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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