CS60N04A4 Datasheet, Mosfet, Huajing Microelectronics

CS60N04A4 Features

• Mosfet l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150

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Part number:

CS60N04A4

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, impr

CS60N04A4 Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS

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CS60N04A4

Huajing Microelectronics

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