Part number:
CS60N04A4
Manufacturer:
Huajing Microelectronics
File Size:
194.58 KB
Description:
Silicon n-channel power mosfet.
CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficie
CS60N04A4 Features
* l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ Applications: Power switch circuit of adaptor and c
CS60N04A4-HuajingDiscreteDevices.pdf
Datasheet Details
CS60N04A4
Huajing Microelectronics
194.58 KB
Silicon n-channel power mosfet.
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