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CS60N04A4 - Silicon N-Channel Power MOSFET

CS60N04A4 Description

Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General .
CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching per.

CS60N04A4 Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Curr

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Datasheet Details

Part number
CS60N04A4
Manufacturer
Huajing Microelectronics
File Size
194.58 KB
Datasheet
CS60N04A4-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS60N04A4-like datasheet