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CS630FA9R Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS630F A9R General .
CS630F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number
CS630FA9R
Manufacturer
CR Micro
File Size
622.42 KB
Datasheet
CS630FA9R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.28Ω)
* Low Gate Charge (Typical Data: 14.6nC)
* Low Reverse transfer capacitances(Typical: 5pF)

Applications

* Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou

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