* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 250 V ID(Tc=25℃) 8.1 A ID(Tc=100℃) 5.1 A IDM 32.4 A VGSS ±30 V EAS 200 mJ EAR 7.4 mJ IAR 8.1 A PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
CS634F
LZG
208.51 KB
N-channel mosfet.
IRFS634(CS634F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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