DSEP29-03A Datasheet - IXYS Corporation

DSEP29-03A HiPerFREDTM Epitaxial Diode

DSEP 29-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 www.DataSheet4U.com VRRM V Type TO-220 AC C 300 DSEP 29-03A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 145°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 30 300 1.2 .

DSEP29-03A Features

* A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0.40.6 2 Applications q q q Symbol IR x Condi

DSEP29-03A_IXYSCorporation.pdf