DSEP29-06B Datasheet - IXYS Corporation

DSEP29-06B Epitaxial Diode

DSEP 29-06A DSEP 29-06B HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 600 V trr = 30/35 ns A C VRSM V 600 600 VRRM V Type TO-220 AC C 600 600 DSEP 29-06A DSEP 29-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions rect., d = 0.5; TC (Version A) = 135°C TC (Version B) = 125°C TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A) (Version B) TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = .

DSEP29-06B Features

* q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0.40.6 2 Applications q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ

DSEP29-06B_IXYSCorporation.pdf