IXFA76N15T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM,, VDD VDSS,TJ 175C TC = 25C 76 200 38 500 15 350 -5
IXFA76N15T2 Features
* International Standard Packages
* 175°C Operating Temperature
* High Current Handling Capability
* Fast Intrinsic Rectifier
* Dynamic dv/dt Rated
* Low RDS(on) Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* DC-DC Converters
