IXFG55N50 HiPerFET Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Sy.

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Datasheet Specifications

Part number: IXFG55N50
Manufacturer: IXYS Corporation
File Size: 115.44 KB
Datasheet: IXFG55N50_IXYSCorporation.pdf
Description: HiPerFET Power MOSFET

Features

* z z z z z 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.4/6 Nm/lb-in z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 V 4.5 V ±200 nA TJ = 25°C TJ = 125°C 25 µA 2 mA 90 mΩ z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, I

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IXFG55N50 HiPerFET Power MOSFET IXYS Corporation

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