IXFG55N50 Datasheet - IXYS Corporation

IXFG55N50 HiPerFET Power MOSFET

HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20.

IXFG55N50 Features

* z z z z z 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.4/6 Nm/lb-in z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

IXFG55N50_IXYSCorporation.pdf