* z 1.13/10 Nm/lb.in. 4 2 g g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V nA µA mA Ω z Low gate charge and capacitances - easier to drive - faster switching International standard p
IXFP3N120 Datasheet (591.56 KB)
IXFP3N120
IXYS Corporation
591.56 KB
Hiperfet power mosfets.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol VDSS VDGR V.
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