* l l l 1.13/10 Nm/lb.in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Adv
IXFP3N80 Datasheet (122.55 KB)
IXFP3N80
IXYS Corporation
122.55 KB
Power mosfet.
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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
IXFA 3N80 IXFP 3N.
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