IXFP3N50PM Datasheet - IXYS Corporation

IXFP3N50PM Power MOSFET

Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 3N50PM VDSS ID25 RDS(on) trr = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 2.

IXFP3N50PM Features

* l 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 l l l Md Weight 1.13/10 Nm/lb.in. 4 g l Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance -

IXFP3N50PM_IXYSCorporation.pdf