IXFP76N15T2 Datasheet - IXYS Corporation

IXFP76N15T2 - Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM,, VDD  VDSS,TJ  175C TC = 25C 76 200 38 500 15 350 -5.

IXFP76N15T2 Features

* International Standard Packages

* 175°C Operating Temperature

* High Current Handling Capability

* Fast Intrinsic Rectifier

* Dynamic dv/dt Rated

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

IXFP76N15T2_IXYSCorporation.pdf