IXFT12N100F Datasheet - IXYS Corporation

IXFT12N100F Power MOSFET

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 12N100F VDSS IXFT 12N100F ID25 RDS(on) = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Co.

IXFT12N100F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mod

IXFT12N100F_IXYSCorporation.pdf