IXFT12N100, IXFT10N100 Datasheet - IXYS

IXFT12N100 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns R DS(on) 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt P D TJ T JM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limite.

IXFT12N100 Features

* International standard package

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFT10N100-IXYS.pdf

IXFT12N100 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT12N100, IXFT10N100. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT12N100, IXFT10N100

Manufacturer:

IXYS

File Size:

73.47 KB

Description:

Power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFT12N100, IXFT10N100.
Please refer to the document for exact specifications by model.

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TAGS

IXFT12N100 IXFT10N100 Power MOSFETs IXYS

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