IXFT12N100 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns R DS(on) 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt P D TJ T JM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limite.
IXFT12N100 Features
* International standard package
* Low R HDMOSTM process
DS (on)
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier
Applications
